Spin–orbit torques in ferrimagnetic Gd/FeCo multilayers

Nanoscale spin reversal by non-local angular momentum transfer following ultrafast laser excitation in ferrimagnetic GdFeCo

In section 1.1 we detail the experimental setup used at the SXR beamline of the Linac Coherent Light Source. This is followed by section 1.2 detailing the sample preparation and the x-ray characterization performed at beamline 13-3 of the Stanford Synchrotron Radiation Lightsource. In section 1.3 we detail how spin sensitivity is achieved in resonant x-ray scattering and subsequently in section...

Nanoscale spin reversal by non-local angular momentum transfer following ultrafast laser excitation in ferrimagnetic GdFeCo.

Ultrafast laser techniques have revealed extraordinary spin dynamics in magnetic materials that equilibrium descriptions of magnetism cannot explain. Particularly important for future applications is understanding non-equilibrium spin dynamics following laser excitation on the nanoscale, yet the limited spatial resolution of optical laser techniques has impeded such nanoscale studies. Here we p...

Self-consistent treatment of nonequilibrium spin torques in magnetic multilayers

It is known that the transfer of spin angular momenta between current carriers and local moments occurs near the interface of magnetic layers when their moments are noncollinear. However, to determine the magnitude of the transfer, one should calculate the spin transport properties far beyond the interface regions. Based on the spin-diffusion equation, we present a self-consistent approach to e...

Temperature dependence of spin-orbit torques across the magnetic compensation point in a ferrimagnetic TbCo

Role of spin-dependent interface scattering in generating current-induced torques in magnetic multilayers

Stacks of alternating ferromagnetic and nonmagnetic metal layers exhibit giant magnetoresistance ~GMR!, because their electrical resistance depends strongly on whether the moments of adjacent magnetic layers are parallel or antiparallel. This effect has allowed the development of new kinds of field-sensing and magnetic memory devices. The cause of the GMR effect is that conduction electrons are...